RF CMOS power amplifiers

theory, design, and implementation by Mona Mostafa Hella

Publisher: Kluwer Academic Publishers in Boston

Written in English
Published: Pages: 94 Downloads: 681
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Subjects:

  • Amplifiers, Radio frequency.,
  • Power amplifiers.,
  • Metal oxide semiconductors, Complementary.,
  • Very high speed integrated circuits.,
  • Radio frequency integrated circuits.
  • Edition Notes

    Includes bibliographical references (p. [89]-92) and index.

    StatementMona Mostafa Hella, Mohammed Ismail.
    SeriesThe Kluwer international series in engineering and computer science -- SECS 659
    ContributionsIsmail, Mohammed.
    Classifications
    LC ClassificationsTK7871.58.P6 H45 2002
    The Physical Object
    Paginationxvi, 94 p. :
    Number of Pages94
    ID Numbers
    Open LibraryOL20644504M
    ISBN 100792376285
    LC Control Number2001050704

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The typical circuit‐level challenges for the integration of radio frequency (RF) power amplifiers in a complementary metal‐oxide‐semiconductor (CMOS) technology are the low supply Cited by: 1.

ANALYSIS AND DESIGN OF THE CLASS E POWER AMPLIFIER IN CMOS. Introduction. A Theoretical Study of the Class E Amplifier. The Class E Requirements. Electronics, an international, peer-reviewed Open Access journal.

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Rating: (not yet rated) 0 with reviews - Be the first. CMOS power amplifiers are an unsatisfactory alternative for modern highPAR modulation techniques because they have inherently poor linearity, which requires the theifs to be backed on .